机读格式显示(MARC)

• 000 00981nam 2200325 a 4500

• 001 0000397961

• 003 SCNU

• 005 20100713095108.0

• 008 810505s1982 nyua b 001 0 eng

• 010 __ |a 81007607

• 020 __ |a 0471085006

• 040 __ |c PUL

• 050 0_ |a TK7871.99.M44 |b N52 1982

• 082 0_ |a 621.3815/2 |2 19

• 093 __ |a O47 |2 4

• 099 __ |a CAL 022000274403

• 100 1_ |a Nicollian, E. H.

• 245 10 |a MOS (metal oxide semiconductor) physics and technology / |c E. H. Nicollian, J.R. Brews.

• 260 __ |a New York : |b Wiley, |c c1982.

• 300 __ |a xv, 906 p. : |b ill. ; |c 25 cm.

• 500 __ |a "A Wiley-Interscience publication."

• 504 __ |a Includes bibliographical references and indexes.

• 650 _0 |a Metal oxide semiconductors.

• 700 1_ |a Brews, J. R.

• 950 __ |a SCNU |f O47/N646

• 998 __ |a PUL

• 999 __ |t E |A zxq |a 20100713 09:50:55 |G unknown |g 19980101 |M zxq |m 20100713 10:08:09

• 000 1000011380

• 991 __ |a 022005006888

• 907 __ |a SCNU |f O47/N646