机读格式显示(MARC)

• 000 01926nam 2200529 a 4500

• 001 0000401158

• 003 SCNU

• 005 20050716192746.0

• 008 820902s1982 gw a b 00110 eng

• 010 __ |a 82016883 //r912

• 020 __ |a 0387118780 (U.S.)

• 037 __ |a 9007124 |c 64.80

• 040 __ |a DLC |c DLC |d DLC |d OCoLC

• 050 00 |a TK7871.85 |b .I587 1982

• 082 00 |a 621.3815/2 |2 19

• 093 __ |a TN305.3-53 |2 4

• 099 __ |a CAL 022000273840 |a CAL 022000385664 |a CAL 022000883892

• 111 2_ |a Ion Implantation School |d (1982 : |c Berchtesgaden, Germany)

• 245 10 |a Ion implantation techniques : |b lectures given at the Ion Implantation School, in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, Berchtesgaden, Fed. Rep. of Germany, September 13-15, 1982 / |c editors, H. Ryssel and H. Glawischnig.

• 260 __ |a Berlin ; |a New York : |b Springer-Verlag, |c 1982.

• 300 __ |a xii, 372 p. : |b ill. ; |c 24 cm.

• 440 _0 |a Springer series in electrophysics ; |v v. 10

• 504 __ |a Includes bibliographies and index.

• 650 _0 |a Ion implantation.

• 650 _0 |a Semiconductor doping.

• 700 10 |a Ryssel, Heiner, |d 1941-

• 700 10 |a Glawischnig, H. |q (Hans), |d 1939-

• 711 20 |a International Conference on Ion Implantation: Equipment and Techniques |n (4th : |d 1982 : |c Berchtesgaden, Germany)

• 920 __ |a 211010 |b TN305.3 |c Io6 |z 1

• 920 __ |a 231030 |b TN305.3 |c R996I |z 1

• 920 __ |a 261020 |b TN305.3 |c R996 |z 1

• 920 __ |a 211030 |z 2

• 920 __ |a 242010 |z 1

• 920 __ |a 212010 |z 1

• 920 __ |a 251050 |z 1

• 920 __ |a 244050 |z 2

• 920 __ |a 242120 |z 1

• 920 __ |a 215010 |z 1

• 920 __ |a 222220 |z 1

• 920 __ |a 243040 |z 1

• 920 __ |a 231220 |z 1

• 950 __ |a SCNU |f TN305.3-53/I64

• 998 __ |a PUL

• 999 __ |t C |A gly2 |a 20050716 19:25:52 |M gly2 |m 20050716 19:27:46

• 000 1000014601

• 991 __ |a 022005010031

• 907 __ |a SCNU |f TN305.3-53/I64