机读格式显示(MARC)

• 000 01300nam 2200373 a 4500

• 001 0000397414

• 003 SCNU

• 005 20100713093339.0

• 008 810417m19811983wb a b 001 0 eng

• 010 __ |a 81005354 //r83

• 020 __ |a 0387105182 (U.S. : v. 1)

• 020 __ |a 0387115153 (U.S. : v. 2)

• 040 __ |c PUL

• 050 0_ |a QC611.6.D4 |b L36

• 082 0_ |a 537.6/22 |2 19

• 093 __ |a O471 |2 4

• 099 __ |a CAL 022000286789 |a CAL 021999664272 |a CAL 021999664271 |a CAL 022000888482

• 100 1_ |a Lannoo, M. |q (Michel), |d 1942-

• 245 10 |a Point defects in semiconductors / |c M. Lannoo, J. Bourgoin.

• 260 __ |a Berlin ; |a New York : |b Springer-Verlag, |c 1981-1983.

• 300 __ |a 2 v. : |b ill. ; |c 24 cm.

• 490 0_ |a Springer series in solid-state sciences ; |v 22, 35

• 500 __ |a Vol. 2 by J. Bourgoin, M. Lannoo, with a foreword by G.D. Watkins.

• 504 __ |a Includes bibliographical references and index.

• 505 0_ |a 1. Theoretical aspects -- 2. Experimental aspects.

• 650 _0 |a Semiconductors |x Defects.

• 650 _0 |a Point defects.

• 700 1_ |a Bourgoin, J. |q (Jacques), |d 1938-

• 950 __ |a SCNU |f O471/L292

• 998 __ |a PUL

• 999 __ |t E |A zxq |a 20100713 09:33:05 |G unknown |g 19980101 |M zxq |m 20100713 10:07:00

• 000 1000010829

• 991 __ |a 022005006335

• 907 __ |a SCNU |f O471/L292